For a real world experiment, involving laser annealing of a Vanadium thin film, I wish to monitor the laser beam intensity on the VO2 surface, as it appears just at the onset of this phase change.Assuming this involves an appearance of a thin film of oxide ( ie, different from a very very thin native oxide).
This being the case VO2 transition to V2O5 is fairly rapid ( very small temperature change window) in the laser annealing experiment.
I wish to use FDTD based module as a predictive tool, to stop the laser, just before this other phase appears.
Can I monitor the field intensity and power in my model, right on the surface of Vanadium ( more precisely the mix of V(a metal) & VO2 (metaloxide:a dielectric)? Is it safe to assume that in this model the Input source is a laser source ( as in the real experiment? What changes should I apply to the Input Source in this model other than the exciting wavelength changes,for it to “best-fit” my experiment.
I have made changes to
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